Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation

The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of t...

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Published inMeasurement techniques Vol. 59; no. 10; pp. 1104 - 1111
Main Authors Petrosyants, K. O., Samburskii, L. M., Kharitonov, I. A., Kozhukhov, M. V.
Format Journal Article
LanguageEnglish
Published New York Springer US 2017
Springer
Springer Nature B.V
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Summary:The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design are determined.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0543-1972
1573-8906
DOI:10.1007/s11018-017-1100-z