Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation
The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of t...
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Published in | Measurement techniques Vol. 59; no. 10; pp. 1104 - 1111 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
2017
Springer Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design are determined. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0543-1972 1573-8906 |
DOI: | 10.1007/s11018-017-1100-z |