MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(1 0 0) and ZnTe(1 0 0) substrates

Deposition of an amorphous ZnTe seed layer with a thickness of 10 nm followed by its solid-phase crystallization was done before the beginning of molecular beam epitaxy of ZnTe layers on GaAs(1 0 0) substrates. RHEED patterns have proved that a creation of three-dimensional formations is avoided, an...

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Bibliographic Details
Published inJournal of crystal growth Vol. 214; pp. 35 - 39
Main Authors Kozlovsky, V.I, Krysa, A.B, Korostelin, Yu.V, Sadofyev, Yu.G
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2000
Subjects
Cathodoluminescence
Homoepitaxy
MBE
ZnCdTe/ZnTe QW
ZnTe substrates
MBE
Homoepitaxy
71.55.Gs
ZnCdTe/ZnTe QW
78.60.Hk
ZnTe substrates
81.15.Hi
Cathodoluminescence
81.65.Cf
87.64.Bx
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Summary:Deposition of an amorphous ZnTe seed layer with a thickness of 10 nm followed by its solid-phase crystallization was done before the beginning of molecular beam epitaxy of ZnTe layers on GaAs(1 0 0) substrates. RHEED patterns have proved that a creation of three-dimensional formations is avoided, and two-dimensional growth occurs during the early stage of epitaxy. Cathodoluminescence (CL) and X-ray measurements have evidenced a higher quality of ZnTe layers grown with an amorphous ZnTe seed layer. ZnTe substrates made of ZnTe crystals grown from vapor phase have been used for the epitaxy of ZnTe layers and ZnCdTe/ZnTe structures also. CL comparison of homo- and heteroepitaxial layers and structures shows the superiority of epilayers and structures grown on ZnTe(1 0 0) substrates.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00054-3