Correlation between ambient air and continuous bending stress for the electrical reliability of flexible pentacene-based thin-film transistors

• Published in: Japanese Journal of Applied Physics Vol. 54; no. 1; pp. 11602 - 1-011602-4
• Main Authors: Fan, Ching-Lin, Lin, Wei-Chun, Peng, Han-Hsing, Lin, Yu-Zuo, Huang, Bohr-Ran
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.01.2015
• Subjects: Bending; Channels; Cracks; Devices; Moisture; Pentacene; Semiconductor devices; Stresses; Thin films; Transistors
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.54.011602

This study investigated how continuous bending stress affects the electrical characteristics of pentacene-based organic thin-film transistors (OTFTs) with poly(4-vinylphenol) (PVP) gate insulator in a vacuum and in ambient air. In tension mode, the strain direction of the fabricated devices was perpendicular to the device channel length. The OTFT devices that were bent in a vacuum exhibited a decreased on current because of cracking in the pentacene channel layer, which can obstruct the transport of charge carriers and deteriorate the on current of the OTFTs. The OTFT devices that were bent in ambient air exhibited a slightly decreased on current and considerably increased off current and subthreshold swing (SS). It was assumed that air moisture passed through the pentacene cracks into the interface between the PVP and pentacene layer, thereby yielding an increase in polar moisture traps, and leading to an increase in the conductivity of the pentacene, thus yielding a slightly decreased on current and considerably increased off current and SS.