Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 166-167; pp. 793 - 797
• Main Authors: Jiménez de Castro, M., Serna, R., Chaos, J.A., Afonso, C.N., Hodgson, E.R.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2000
• Subjects: Defects; Luminescence; Pulsed laser deposition (PLD); Radiation effects; Rare-earth doping; 78.66.Nk; 78.55.Hx; Radiation effects; Pulsed laser deposition (PLD); Luminescence; 61.80.Fe; Rare-earth doping; 81.15.Fg; Defects
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(99)01178-7

Er-doped amorphous Al2O3 films produced by alternate pulsed laser deposition show a weak Er PL emission at around 1.54 μm, the lifetime being of the order of 0.1 ms. On thermal annealing treatments up to 850°C, the intensity increases and lifetimes as high as 6 ms are achieved. Above 800°C slight changes in the shape of the 1.54 μm emission band are observed, suggesting changes in the local Er3+ environment. Electron irradiation of annealed films leads to a decrease in the PL intensity without changing the lifetime. This effect, which anneals out between 200°C and 600°C, is most likely due to electronic processes involving Er ions. This type of defect is not present in as-grown films.