The characteristics before and after annealing of amorphous silicon films prepared by ECR plasma CVD

The optical and electrical properties before and after annealing of amorphous silicon films, deposited by electron cyclotron resonance plasma chemical vapor deposition as a function of substrate temperature, were investigated. The properties of non-annealed Si films were improved with increasing sub...

Full description

Saved in:
Bibliographic Details
Published inJournal of non-crystalline solids Vol. 221; no. 1; pp. 103 - 105
Main Authors Kang, Moonsang, Kim, Jaeyeong, Lim, Taehoon, Oh, Inhwan, Jeon, Bupju, Jung, Ilhyun, An, Chul
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.11.1997
Online AccessGet full text

Cover

More Information
Summary:The optical and electrical properties before and after annealing of amorphous silicon films, deposited by electron cyclotron resonance plasma chemical vapor deposition as a function of substrate temperature, were investigated. The properties of non-annealed Si films were improved with increasing substrate temperature. On the other hand, Hall mobility of annealed Si films decreased with increasing substrate temperature.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(97)00424-9