SiGe quantum cascade structures for light emitting devices

• Published in: Journal of crystal growth Vol. 278; no. 1; pp. 488 - 494
• Main Authors: Zhang, J., Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Kelsall, R.W., Lynch, S., Towsend, P., Paul, D.J., Fewster, P.F.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2005; Elsevier
• Subjects: A1. Stresses; A1. X-ray diffraction; A3. Molecular beam epitaxy; Applied sciences; B1. Germanium silicon alloys; B2. Semiconducting silicon compounds; Condensed matter: structure, mechanical and thermal properties; Deformation and plasticity (including yield, ductility, and superplasticity); Electronics; Exact sciences and technology; Light-emitting devices; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; 85.60.Jb; 62.10.Dc; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting silicon compounds; A1. Stresses; 81.15.Hj; 62.25.+g; A1. X-ray diffraction; Binary compound; Stress strain relation; Segregation; 62.25.+g Al. Stresses; Crystal growth from vapors; Experimental study; Inorganic compound; Light emitting diode; Quantum cascade laser; Silicon Germanides; Transmission electron microscopy; Bl. Germanium silicon alloys; Strained layer; Pseudomorphic growth; Molecular beam epitaxy; GSMBE method; Silicon; Al. X-ray diffraction; Nanostructured materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.12.046

The realisation of III–V quantum cascade lasers has initiated a strong interest in developing a Si/SiGe-based quantum cascade laser over the last 3 years. Most efforts were focused on the growth of strain-balanced Si/SiGe superlattices on strain-relaxed SiGe virtual substrates. This paper discusses the progress so far and addresses some of the material issues related to the epitaxy of Si/SiGe quantum cascade structures, including strain–stress balance and production of strain-relaxed SiGe virtual substrates.