A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction

After differences between the RF MOSFET and conventional high-frequency transistors, which make the proper modeling of RF MOSFET complicated and difficult, are addressed, a four-terminal small-signal model of an RF MOSFET with a very simple and accurate parameter extraction method is presented. This...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 43; no. 4; pp. 601 - 609
Main Authors Je, Minkyu, Han, Jeonghu, Shin, Hyungcheol, Lee, Kwyro
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.04.2003
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Summary:After differences between the RF MOSFET and conventional high-frequency transistors, which make the proper modeling of RF MOSFET complicated and difficult, are addressed, a four-terminal small-signal model of an RF MOSFET with a very simple and accurate parameter extraction method is presented. This model includes the intrinsic and extrinsic elements important for RF AC simulation in the strong inversion operation region. Accuracy of the model and extraction method is verified with the measured data and the needs of the intrinsic body node are demonstrated to describe the gate bias dependence of the substrate-signal-coupling effect.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(02)00352-9