Atomic-level in situ real-space observation of Ga adatoms on GaAs(0 0 1)(2×4)-As surface during molecular beam epitaxy growth

We study in situ scanning tunneling microscopy (STM) observations of Ga adatoms on the molecular beam epitaxy (MBE) growth front, GaAs(0 0 1)(2×4)-As surface, with a system in which STM and MBE are completely one. It is found that Ga adatoms are self-organized about one unit cell far from the B-step...

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Bibliographic Details
Published inJournal of crystal growth Vol. 201; pp. 118 - 123
Main Authors Tsukamoto, Shiro, Koguchi, Nobuyuki
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1999
Subjects
GaAs
Molecular beam epitaxy
Scanning tunneling microscopy
Surface reconstruction
Scanning tunneling microscopy
Surface reconstruction
07.79.Cz
73.20.At
Molecular beam epitaxy
31.15.Ar
81.65.−b
GaAs
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Summary:We study in situ scanning tunneling microscopy (STM) observations of Ga adatoms on the molecular beam epitaxy (MBE) growth front, GaAs(0 0 1)(2×4)-As surface, with a system in which STM and MBE are completely one. It is found that Ga adatoms are self-organized about one unit cell far from the B-step edge and on a missing dimmer row. Moreover, the three Ga adatoms form a trigonal surface structure. And this trigonal changed to a tetragonal structure with the addition of one Ga atom.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01304-9