Boron and nitrogen co-doped ZnO thin films for opto-electronic applications

• Published in: Ceramics international Vol. 34; no. 4; pp. 1011 - 1015
• Main Authors: Liu, G.X., Shan, F.K., Lee, W.J., Shin, B.C., Kim, H.S., Kim, J.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Kidlington Elsevier Ltd 01.05.2008; Elsevier Science
• Subjects: Applied sciences; BN-doped ZnO; Electronics; Exact sciences and technology; Materials; Microelectronic fabrication (materials and surfaces technology); Properties and stokes shift; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin film; BN-doped ZnO; Thin film; Properties and stokes shift; Integrated optics; Aluminium oxide; Atomic force microscopy; Conducting material; Doped materials; Pulsed laser deposition; Nitrogen addition; Microelectronic fabrication; Spectrophotometer; Optical characteristic; Zinc oxide; Boron addition; Wide band gap semiconductors; Transparent material; Codoping; Electrical characteristic
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2007.09.095

The transparent conductive oxides such as ZnO have been widely studied due to their potential applications. As a promising wide band gap semiconductor, ZnO thin films with various dopants are important in fabricating the photonic devices to meet the various needs. In this study, boron and nitrogen co-doped ZnO thin films were fabricated at different temperatures (100–600 °C) on sapphire (0 0 1) substrates using pulsed laser deposition technique. X-ray diffractometer, atomic force microscope, spectrophotometer and spectrometer were used to characterize the structural, morphological and optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.