MOVPE growth and real structure of vertical-aligned GaAs nanowires

• Published in: Journal of crystal growth Vol. 298; pp. 625 - 630
• Main Authors: Bauer, J., Gottschalch, V., Paetzelt, H., Wagner, G., Fuhrmann, B., Leipner, H.S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 2007; Elsevier
• Subjects: A1. Nanostructures; A3. Metal-organic vapor phase epitaxy; B2. Semiconducting gallium arsenide; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanoscale materials and structures: fabrication and characterization; Other semiconductors; Physics; Quantum wires; Specific materials; Theory and models of film growth; Vapor phase epitaxy; growth from vapor phase; B2. Semiconducting gallium arsenide; 78.67. - n; 81.16.−c; 61.46. + w; A1. Nanostructures; 81.15.Gh; 81.07. - b; 68.65. - k; A3. Metal-organic vapor phase epitaxy; Crystal defects; Gallium arsenides; Inorganic compounds; Growth rate; Selective area; Lithography; 61.46.+w; 68.65.-k; 78.67.-n; 81.15.Gh; 81.16.-c; 81.07.-b; VPE; Nanostructures; Precursor; III-V compound; Operating conditions; Diffraction; Transmission electron microscopy; Partial pressure; MOVPE method; Size effect; Growth mechanism; Nanosphere; Nanowires; Arrays; Al. Nanostructures; A3. Metal-organic vapor phase epitaxy; B2. Semiconducting gallium arsenide; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.10.082

We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented.