Si nanowires synthesized by laser ablation of mixed SiC and SiO2 powders

By using a KrF excimer laser to ablate a target of SiC powder mixed with 10 wt.% SiO2 powder at 1400°C, Si nanowires were deposited on the inner wall of a ceramic tube. Transmission electron microscopy shows that the nanowires are around 14 nm in diameter and co-exist with a small amount of nanopart...

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Bibliographic Details
Published inChemical physics letters Vol. 314; no. 1-2; pp. 16 - 20
Main Authors Tang, Y.H, Zhang, Y.F, Peng, H.Y, Wang, N, Lee, C.S, Lee, S.T
Format Journal Article
LanguageEnglish
Published Elsevier B.V 26.11.1999
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Summary:By using a KrF excimer laser to ablate a target of SiC powder mixed with 10 wt.% SiO2 powder at 1400°C, Si nanowires were deposited on the inner wall of a ceramic tube. Transmission electron microscopy shows that the nanowires are around 14 nm in diameter and co-exist with a small amount of nanoparticles. High-resolution transmission electron microscopy shows that the nanowires are crystalline Si nanowires and the nanoparticles are cubic SiC. The intergrowth of heterocrystal nanowires and nanoparticles verifies that the oxide-assisted growth model of Si nanowires is reasonable.
ISSN:0009-2614
1873-4448
DOI:10.1016/S0009-2614(99)01119-7