An equivalent circuit model of a novel photodetector
An equivalent circuit model of a novel photodetector (PD) is proposed in this article. We use this model to describe the relation between the bias voltage and current ( I– V), also the bias voltage and capacitance( C– V) of this kind of novel PD. The circuit model could optimize the structure of the...
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Published in | Infrared physics & technology Vol. 52; no. 6; pp. 434 - 437 |
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Main Authors | , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.11.2009
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | An equivalent circuit model of a novel photodetector (PD) is proposed in this article. We use this model to describe the relation between the bias voltage and current (
I–
V), also the bias voltage and capacitance(
C–
V) of this kind of novel PD. The circuit model could optimize the structure of the circuit and could be linked with the readout circuit. According to the comparison between the simulation result and the experimental result by circuit testing, we could find they are in good agreement, which proving the correctness of the equivalent circuit model. The signification of this equivalent circuit model is to design an optimal readout circuit (ROIC) for the novel PD. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1350-4495 1879-0275 |
DOI: | 10.1016/j.infrared.2009.09.006 |