APA (7th ed.) Citation

Hiyoshi, T., & Kimoto, T. (2009). Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment. Applied physics express, 2(9), 91101. https://doi.org/10.1143/APEX.2.091101

Chicago Style (17th ed.) Citation

Hiyoshi, Toru, and Tsunenobu Kimoto. "Elimination of the Major Deep Levels in N- and P-Type 4H-SiC by Two-Step Thermal Treatment." Applied Physics Express 2, no. 9 (2009): 91101. https://doi.org/10.1143/APEX.2.091101.

MLA (9th ed.) Citation

Hiyoshi, Toru, and Tsunenobu Kimoto. "Elimination of the Major Deep Levels in N- and P-Type 4H-SiC by Two-Step Thermal Treatment." Applied Physics Express, vol. 2, no. 9, 2009, p. 91101, https://doi.org/10.1143/APEX.2.091101.