Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

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Bibliographic Details
Published inApplied physics express Vol. 2; no. 9; p. 91101
Main Authors Hiyoshi, Toru, Kimoto, Tsunenobu
Format Journal Article
LanguageEnglish
Published 01.09.2009
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ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.2.091101