Characterization of ZnSe/ZnMgBeSe single quantum wells

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 7; no. 3-4; pp. 576 - 580
• Main Authors: Chang, J.H, Cho, M.W, Hong, S.K, Godo, K, Makino, H, Yao, T, Shen, M.Y, Goto, T
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2000
• Subjects: Bandoffset; II–VI; Optical pumped lasing; ZnSe/ZnMgBeSe; ZnSe/ZnMgBeSe; Optical pumped lasing; 85.60.Jb; II–VI; 81.15.Hi; 81.05.Zx; Bandoffset
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/S1386-9477(99)00387-2

We have investigated the optical and structural properties of ZnMgBeSe/ZnSe/ZnMgBeSe quantum-well (QW) structures grown on GaAs (001) substrates by molecular beam epitaxy. The structural property of the QWs is confirmed by a sharp (line width is 21 arcsec) X-ray diffraction peak from ZnMgBeSe cadding layer. Photoluminescence (PL) and photoluminescence-excitation (PLE) spectra of QWs suggest the effective collection of excited carriers due to Type-I band alignment and high quality of ZnMgBeSe cladding layers. The bandoffset in these samples are evaluated as ΔEc=0.6ΔEg(ΔEv=0.4ΔEg) from the optical investigation of multi-quantum-well (MQW) structures and numerical calculation of the optical transition energies. From the optical pumping experiment, room temperature stimulated emission is observed at short wavelength (444 nm) with low threshold (16kWcm−2). Laser action is observed up to 473 K and the characteristic temperature (T0) is determined to be as high as 166 K. We believe that the low threshold and high characteristic temperature are due to the efficient electron and hole confinement in the quantum-well and high crystalline quality of the cladding layer as revealed from high excitation pumping experiments at low temperature.