Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes

GaN-based UV Schottky-type (ST) LEDs were fabricated using GaN layers grown by molecular beam epitaxy (MBE). Red, green, and blue (RGB) pixels were fabricated using the UV-LEDs and RGB phosphors. Surface modification led to the reduction in reverse-bias leakage current and improved forward-bias char...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 52; no. 8; pp. 08JH12 - 08JH12-3
Main Authors Honda, Tohru, Yamaguchi, Tomohiro, Sakai, Naoyuki, Fujioka, Shuhei, Sugiura, Yohei
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2013
Subjects
Breakdown
Electric potential
Gallium nitrides
Leakage current
Light emission
Molecular beam epitaxy
Phosphors
Pixels
Voltage
Online AccessGet full text

Cover

More Information
Summary:GaN-based UV Schottky-type (ST) LEDs were fabricated using GaN layers grown by molecular beam epitaxy (MBE). Red, green, and blue (RGB) pixels were fabricated using the UV-LEDs and RGB phosphors. Surface modification led to the reduction in reverse-bias leakage current and improved forward-bias characteristics. It was found that the ideality factor, $n$, was improved with increasing breakdown voltage in the reverse-bias range. We believe that the improvement is due to the reduced number of threading-dislocation (TD)-related leakage paths. The effect of the point defects around the TDs on light emission was reduced by the surface modification because the number of current paths around the TDs was reduced.
Bibliography:(Color online) $I$--$V$ characteristics of GaN-based Schottky-type LEDs with the surface treatment (FP) and without it (BHF). (Color online) Ideality factor $n$ as a function of breakdown voltage of GaN-based ST-LEDs. (Color online) Schematic drawings of the surface modification. (Color online) Light emission spectra of RGB phosphors excited by GaN-based ST-LEDs.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.08JH12