Suppression of reverse recovery surge voltage of silicon power diode by adjusting trap energy levels through local lifetime control

• Published in: Japanese Journal of Applied Physics Vol. 53; no. 4S; pp. 4 - 1-04EP14-5
• Main Authors: Yamashita, Yusuke, Machida, Satoru, Sugiyama, Takahide
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.04.2014
• Subjects: Adjustment; Density distribution; Devices; Diodes; Electric potential; Energy levels; Silicon; Surges; Voltage
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.53.04EP14

To suppress the reverse recovery surge voltage of silicon power diodes, the effects of adjusting trap energy levels through local lifetime control were investigated by device simulation and theoretical analysis of the Shockley-Read-Hall (SRH) model. In general, local lifetime control techniques localize carrier traps at the anode side of a diode and optimize the carrier lifetime profile to suppress surge voltage. However, the suppression effect of a certain localized trap density distribution on surge voltage varies with a change in trap energy level, even if the trap density distribution is the same. It became clear that deep trap energy levels suppress surge voltage more than shallow trap energy levels at 1000 A/cm2 or less. Thus, deep trap energy levels such as Et − Ei = 0.0-0.2 eV are favorable for suppressing surge voltage in almost all power devices.