Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as w...

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Bibliographic Details
Published inPhysical review letters Vol. 96; no. 9; p. 096601
Main Authors Yamanouchi, M, Chiba, D, Matsukura, F, Dietl, T, Ohno, H
Format Journal Article
LanguageEnglish
Published United States 10.03.2006
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Summary:Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.
ISSN:0031-9007
DOI:10.1103/physrevlett.96.096601