Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection
Optimization of various growth parameters for type-II 13 MLs InAs/7 MLs GaSb strained layer superlattices (SLSs) ( λ cut-off ∼8 μm at 300 K), grown by solid source molecular beam epitaxy, has been undertaken. This includes a systematic study to investigate the influence of the effect of the growth t...
Saved in:
Published in | Journal of crystal growth Vol. 311; no. 7; pp. 1901 - 1904 |
---|---|
Main Authors | , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
15.03.2009
Elsevier |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Optimization of various growth parameters for type-II 13 MLs InAs/7 MLs GaSb strained layer superlattices (SLSs) (
λ
cut-off ∼8
μm at 300
K), grown by solid source molecular beam epitaxy, has been undertaken. This includes a systematic study to investigate the influence of the effect of the growth temperature and the thickness of an InSb layer formed at the GaSb-on-InAs interface on the properties of the superlattice. We present optical and structural characterization of these SLS structures, using high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and cross-sectional scanning transmission electron microscope (STEM). Optimized growth parameters were then used to grow a 2-μm-thick active region for a SLS detector designed to operate in the long-wave infrared (LWIR) region, which demonstrated full-width half-maximum (FWHM) of 16
arcsec for the first SLS satellite peak and nearly zero lattice mismatch between zero-order SLS peak and GaSb substrate. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2008.11.027 |