AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation

We report on the realization of quantum dot (QD) solar cells comprising a spectrally large absorption range. The QD absorption band is designed by integrating quaternary AlGaInAs QDs with varying aluminum contents in combination with conventional InAs GaAs QDs in the intrinsic region of an AlGaAs p-...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor science and technology Vol. 27; no. 3; pp. 032002 - 32006
Main Authors Schneider, C, Kremling, S, Tarakina, N V, Braun, T, Adams, M, Lermer, M, Reitzenstein, S, Worschech, L, Kamp, M, Höfling, S, Forchel, A
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2012
Subjects
solar cell intermediate band AlGaInAs quantum dots
Online AccessGet full text

Cover

More Information
Summary:We report on the realization of quantum dot (QD) solar cells comprising a spectrally large absorption range. The QD absorption band is designed by integrating quaternary AlGaInAs QDs with varying aluminum contents in combination with conventional InAs GaAs QDs in the intrinsic region of an AlGaAs p-i-n structure. By adjusting the material composition in the different QD layers, we can cover a spectral range from 680 to 1150 nm by QD absorption. Based on our results we discuss a newly proposed solar cell design employable to facilitate intermediate band absorption for an increased efficiency.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/27/3/032002