Comparison of gas-phase reactions in low-temperature growth of Si films by photochemical vapor deposition and the hot wire cell method

Mercury sensitized photochemical vapor deposition and hot wire cell method were studied as growth techniques of Si films at low temperature (<400°C). In both techniques, the boundaries indicating the structural transition of the Si films were observed to depend on the substrate temperature and th...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 266; pp. 105 - 109
Main Authors Abe, Katsuya, Tsushima, Takeshi, Ichikawa, Mitsuru, Yamada, Akira, Konagai, Makoto
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2000
Subjects
S180
H170
V117
D150
T200
C290
A200
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Summary:Mercury sensitized photochemical vapor deposition and hot wire cell method were studied as growth techniques of Si films at low temperature (<400°C). In both techniques, the boundaries indicating the structural transition of the Si films were observed to depend on the substrate temperature and the total pressure. The results of the theoretical analysis indicated that the film structure is correlated with the ratio of atomic hydrogen to SiH 3 radical on the growing surface. By the hot wire method, polycrystalline Si films were successfully obtained on glass substrate without H 2 dilution. These films had a growth rate >1 nm/s, which was about 10 times larger than that of the films grown by photochemical vapor deposition. This method can generate a larger flux of SiH 3 and the flux of H is also large enough to induce crystallization on glass substrate.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(99)00749-8