Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

• Published in: Solid-state electronics Vol. 47; no. 9; pp. 1533 - 1538
• Main Authors: Baik, K.H., Irokawa, Y., Ren, F., Pearton, S.J., Park, S.S., Park, Y.J.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.09.2003
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/S0038-1101(03)00071-6

A comparison was made of the forward current–voltage characteristics of bulk GaN Schottky and p–n junction rectifiers using a quasi-three-dimensional simulator. The model includes incomplete ionization of the deep Mg acceptor (175 meV) in the p +-GaN side of the junction and the temperature dependence of mobility and GaN band gap. The forward turn-on voltages, V F, decrease with increasing temperature for both types of rectifier and are ∼2.5 V at 100 A cm −2 at 573 K for the junction diodes and ⩽1 V under similar conditions for the Schottky diodes. The effect of p-layer thickness and doping in the p–n junction was also investigated.