Quantum-dot growth simulation on periodic stress of substrate

InAs quantum dots (QDs) are grown on the cleaved edge of an In(x)Ga(1-x)AsGaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an In(x)Ga(1-x)As layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically...

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Published inThe Journal of chemical physics Vol. 123; no. 9; p. 94708
Main Authors Zhao, Chang, Chen, Y H, Cui, C X, Xu, B, Sun, J, Lei, W, Lu, L K, Wang, Z G
Format Journal Article
LanguageEnglish
Published United States 01.09.2005
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Summary:InAs quantum dots (QDs) are grown on the cleaved edge of an In(x)Ga(1-x)AsGaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an In(x)Ga(1-x)As layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic Monte Carlo method. Our results show that a good alignment of QDs can be achieved when the strain energy reaches 2% of the atomic binding energy. The simulation results are in excellent qualitative agreement with our experiments.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.2006677