Investigation of the “composition-pulling or lattice-latching” effect in LPE

• Published in: Journal of crystal growth Vol. 277; no. 1; pp. 138 - 142
• Main Authors: del P. Rodríguez-Torres, M., Gorbatchev, A.Yu, Mishurnyi, V.A., de Anda, F., Mendez-García, V.H., Asomoza, R., Kudriavtsev, Yu, Hernandez, I.C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.04.2005; Elsevier
• Subjects: A1. Solidification; A3. Liquid phase epitaxy; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Iii-v semiconductors; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; 73.61.Ey; A1. Solidification; A3. Liquid phase epitaxy; 81.15.Lm; B2. Semiconducting III–V materials; Crystal growth; LPE; Inorganic compounds; Epitaxial layers; Ternary compounds; Thick films; Photoluminescence; Composition effect; XRD; Experimental study; B2. Semiconducting III-V materials; Growth from liquid; Thin films; Thickness; Gallium phosphides; Secondary ion mass spectra; 81.15.Lm Al. Solidification; Indium phosphides; Chemical composition; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.01.092

A study of the “composition-pulling or lattice-latching” effect has been done for the case of GaInP epitaxial layers grown on GaAs and GaInAs substrates. The layers were grown simultaneously on two different substrates placed side by side under the same liquid solution. The layers were characterized by photoluminescence, secondary ion mass spectroscopy (SIMS) and X-ray diffraction. The chemical compositions of the layers were different for samples grown on substrates with different lattice constant. Moreover, the thickness of the epitaxial and of the transition layers also depends on the kind of substrate.