Growth of AlAsSb/InGaAs MBE-layers for all-optical switches

• Published in: Journal of crystal growth Vol. 278; no. 1; pp. 544 - 547
• Main Authors: Cristea, P., Fedoryshyn, Y., Jäckel, H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2005; Elsevier
• Subjects: A1. Interfaces; A1. Photoluminescence; A1. X-ray diffraction; A3. Quantum wells; A3. δ-doping; B1. InGaAs/AlAsSb; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wells; A3. δ-doping; A3. Quantum wells; B1. InGaAs/AlAsSb; A1. Interfaces; A1. X-ray diffraction; A1. Photoluminescence; Gallium arsenides; Inorganic compounds; Segregation; Doping; Photoluminescence; Crystal growth from vapors; XRD; Thin films; Al. Interfaces; Compensation; Molecular beam epitaxy; Arsenic Antimonides; Aluminium antimonides; Buffer layer; Optical switches; Multiple quantum well; Al. Photoluminescence; Experimental study; Silicon additions; Indium arsenides; Solid source molecular beam epitaxy; Al. X-ray diffraction
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.12.177

AlAsSb- and InGaAs(:Si)-layers have been grown by molecular beam epitaxy lattice matched to InP-substrates and characterized by X-ray diffraction, photoluminescence (PL) and capacitance–voltage profiling. Multi-quantum-well structures with 10 periods of 6 nm InGaAs-wells and 15 nm of AlAsSb-barriers were investigated in terms of interface abruptness and Si-doping. The PL full-width at half-maximum (PL-FWHM) at room temperature of undoped structures was reduced from 137 to 84 nm due to growth interruptions at interfaces under As-flow and with In and Sb segregation compensation. The Si doping by co-deposition of the InGaAs wells was compared to δ-doping centered to the wells. Uniformly doped InGaAs-wells with a Si concentration of 1×10 19 atoms/cm 3 showed an increased PL-FWHM of 178 nm due to degradation of interfaces. By δ-doping with 0.05 monolayers of Si in the middle of the wells the PL-FWHM could be reduced to 122 nm and the intensity of the signal could be increased compared to the uniformly doped quantum wells.