Improved N–Al codoped p-type ZnO thin films by introduction of a homo-buffer layer

• Published in: Journal of crystal growth Vol. 274; no. 3-4; pp. 425 - 429
• Main Authors: Lu, J.G., Zhu, L.P., Ye, Z.Z., Zeng, Y.J., Zhuge, F., Zhao, B.H., Ma, D.W.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2005; Elsevier
• Subjects: 61.72.V; 72.80.E; 73.61.G; 78.66.H; A1. Crystal structure; A1. Doping; A1. p-type ondution; A3. DC reative magnetron sputtering; B1. Zinc compounds; B2. Semiconducting II–VI materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Conductivity of specific materials; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Deposition by sputtering; Electronic transport in condensed matter; Exact sciences and technology; Iii-v and ii-vi semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; 78.66.H; B2. Semiconducting II–VI materials; A1. Crystal structure; A1. p-type ondution; 61.72.V; 72.80.E; 73.61.G; A1. Doping; A3. DC reative magnetron sputtering; B1. Zinc compounds; Inorganic compounds; Electrical conductivity; Al. Doping; Doping; Hall effect; Crystal growth from vapors; Bl. Zinc compounds; Thin films; Cathode sputtering; B2. Semiconducting II-VI materials; Nitrogen additions; Carrier mobility; Buffer layer; Epitaxial layers; Transition element compounds; 78.66.H Al. Crystal structure; Binary compounds; Experimental study; Zinc oxides; II-VI semiconductors; Aluminium additions; Reactive sputtering; Carrier density; Codoping
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.10.019

p-type ZnO thin films have been realized by a N–Al codoping method. The influence of homo-buffer layer on film properties was studied in this work. The buffer layer was deposited at a high temperature of 600°C, and the desired codoped film was successively formed at 500°C on the first template layer. The N–Al codoped ZnO film was improved evidently in its crystal quality, optical quality and p-type conduction by adopting a homo-buffer layer. Hall measurements revealed that the p-type film had a low resistivity around 8.20Ωcm. The decrease in resistivity comes from a large increase of mobility (from 0.43 to 2.06cm2V−1s) and a slight increase of carrier concentration (typically about 1017cm−3). Introduction of a homo-buffer layer is a promising approach to realize p-type ZnO.