Study of local strain distribution in semiconductor devices using high-resolution X-ray microbeam diffractometry

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 467; pp. 1205 - 1208
• Main Authors: Yokoyama, K., Takeda, S., Urakawa, M., Tsusaka, Y., Kagoshima, Y., Matsui, J., Kimura, S., Kimura, H., Kobayashi, K., Ohhira, T., Izumi, K., Miyamoto, N.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2001
• Subjects: Asymmetric Bragg reflection; High-resolution microbeam diffraction; Reciprocal space map; Strain distribution; X-ray microbeam; 07.85.Qe; Reciprocal space map; 07.85.Y; Strain distribution; X-ray microbeam; 61.72.D; Asymmetric Bragg reflection; High-resolution microbeam diffraction; 61.10.N
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/S0168-9002(01)00578-2

High-resolution X-ray diffraction has been carried out by using a vertically and horizontally condensed X-ray microbeam at the Hyogo beamline (BL24XU) of SPring-8. The microbeam is 7×5 μm 2 in size and it possesses a small angular divergence and a narrow energy bandwidth. The sample is a Si substrate on which thermal oxide films are fabricated with fine patterns. At the region of the line-and-space pattern, many periodic peaks lying along the transverse direction are observed in a reciprocal space map. Those patterns are attributed to some local strain distribution due to the patterned oxide film on the Si wafer.