Carrier transport mechanisms through the metal/p-type diamond semiconductor interface

Carrier transport mechanisms at p-diamond/metal interfaces were studied by analyzing the dependencies of the specific contact resistivities ( ρ c) on the measurement temperature and the acceptor concentration ( N A). A variety of metals, such as Ti, Mo, Cr (carbide forming metals), Pd and Co (carbon...

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Published inDiamond and related materials Vol. 6; no. 5; pp. 847 - 851
Main Authors Koide, Y., Yokoba, M., Otsuki, A., Ako, F., Oku, T., Murakami, Masanori
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.1997
Subjects
Diamond
Electrical properties
Interface/interfacial
Metal
Diamond
Metal
Electrical properties
Interface/interfacial
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Summary:Carrier transport mechanisms at p-diamond/metal interfaces were studied by analyzing the dependencies of the specific contact resistivities ( ρ c) on the measurement temperature and the acceptor concentration ( N A). A variety of metals, such as Ti, Mo, Cr (carbide forming metals), Pd and Co (carbon soluble metals), were deposited on boron-doped polycrystalline diamond films, and the ρ c values were measured by a transmission line method. A constant Schottky barrier height (SBH) of around 0.5 eV was measured for these annealed contacts, and the reason was believed to be due to phase transformation from metastable diamond to a stable conductive graphite layer in the vicinity of the diamond/metal interface. By controlling the crystal structure at the diamond/metal interface, non-annealed ohmic and high-voltage Schottky contacts were successfully developed.
ISSN:0925-9635
1879-0062
DOI:10.1016/S0925-9635(96)00632-2