Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

The effect of selective Si doping on the emission efficiency in ultraviolet (UV) light-emitting diodes (LEDs) is investigated both experimentally and theoretically. The results show that the light output power increases with the number of Si-doped barriers (QBs). Experimental results indicate that c...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 52; no. 8; pp. 08JL15 - 08JL15-4
Main Authors Lu, Yu-Hsuan, Fu, Yi-Keng, Huang, Shyh-Jer, Su, Yan-Kuin, Chen, Ying-Chih, Xuan, Rong, Pilkuhn, Manfred H
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2013
Subjects
Aluminum gallium nitrides
Barriers
Doping
Emission
Emission analysis
Light-emitting diodes
Silicon
Ultraviolet
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Summary:The effect of selective Si doping on the emission efficiency in ultraviolet (UV) light-emitting diodes (LEDs) is investigated both experimentally and theoretically. The results show that the light output power increases with the number of Si-doped barriers (QBs). Experimental results indicate that compared with an all-undoped-QB LED, a factor of 3.17 can be achieved for the output power of an all-doped-QB LED at 350 mA. Detailed analysis on this phenomenon shows that the Si-doped QB is beneficial to suppress the nonradiative recombination rate by excess electrons in doped barriers.
Bibliography:(Color online) Carrier concentration of (a) LED I, (b) LED II, (c) LED III, (d) LED IV, and (e) LED V at 350 mA. The horizontal axis is along the growth direction. (Color online) Corresponding radiative and nonradiative recombination rate of (a) LED I, (b) LED II, (c) LED III, (d) LED IV, and (e) LED V at 350 mA. (Color online) (a) Forward voltage and (b) light output power as a function of current injection of LEDs with selected Si doping in the QB.
ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.08JL15