Growth of cubic SiC single crystals by the physical vapor transport technique

• Published in: Journal of crystal growth Vol. 308; no. 2; pp. 241 - 246
• Main Authors: Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Püsche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.10.2007; Elsevier
• Subjects: A2. Bulk growth; A2. Modified Lely method; A2. Physical vapor transport; B1. 3C-SiC; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; B1. 3C-SiC; A2. Physical vapor transport; 81.10; 78.20; A2. Modified Lely method; A2. Bulk growth; 61.43D; 72.20; Defect density; Temperature dependence; Cubic lattices; Crystal defects; Epitaxial layers; Cubic crystals; Growth rate; Thermal decomposition; 81.10; 61.43D; 72.20; 78.20; Bl. 3C-SiC; A2. Bulk growth; A2. Physical vapor transport; A2. Modified Lely method; Mechanical properties; Silicon carbides; Crystal seeds; Silicon additions; Deposition process; Monocrystals; Internal stresses; Blood platelets; Growth mechanism; Physical vapor deposition
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.07.060

Suitable process parameters for the growth of cubic 3C-SiC single crystals via the seeded physical vapor transport (PVT) technique, also known as the modified Lely method, have been determined. Free-standing, 200 μm thick 3C-SiC epilayers with (0 0 1)- or (0 0 1¯)-face grown on undulant Si (0 0 1) as well as 3C-SiC platelets with [1 1 1]- or [1¯ 1¯ 1¯]-orientation grown by thermal decomposition of methyl trichlorosilane in hydrogen were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500 °C. The temperature of the seed crystals was kept at about 1900 °C. Stable growth of 3C-SiC bulk material of high crystalline quality was reached on 3C-SiC seed crystals with (0 0 1)-face providing a low density of planar defects and at near-thermal-equilibrium conditions resulting in a reduction of internal stress and as a consequence in avoiding the generation of new extended crystal defects. The growth rate achieved under these conditions was approximately 0.05 mm/h. The nitrogen donor concentration in the grown 3C-SiC crystals was determined to be equal to (2–6)×10 18 cm −3.