InAs/GaSb superlattices for advanced infrared focal plane arrays

We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3–5 μm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 super...

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Published inInfrared physics & technology Vol. 52; no. 6; pp. 344 - 347
Main Authors Rehm, Robert, Walther, Martin, Schmitz, Johannes, Rutz, Frank, Fleißner, Joachim, Scheibner, Ralf, Ziegler, Johann
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.11.2009
Elsevier
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Summary:We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3–5 μm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 superlattice periods confirms that InAs/GaSb superlattice focal plane arrays achieve very high external quantum efficiency. This enabled the fabrication of a range of monospectral MWIR imagers with high spatial and excellent thermal resolution at short integration times. Furthermore, novel dual-color imagers have been developed, which offer advanced functionality due to a simultaneous, pixel-registered detection of two separate spectral channels in the MWIR.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2009.09.005