InAs/GaSb superlattices for advanced infrared focal plane arrays
We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3–5 μm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 super...
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Published in | Infrared physics & technology Vol. 52; no. 6; pp. 344 - 347 |
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Main Authors | , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.11.2009
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3–5
μm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 superlattice periods confirms that InAs/GaSb superlattice focal plane arrays achieve very high external quantum efficiency. This enabled the fabrication of a range of monospectral MWIR imagers with high spatial and excellent thermal resolution at short integration times. Furthermore, novel dual-color imagers have been developed, which offer advanced functionality due to a simultaneous, pixel-registered detection of two separate spectral channels in the MWIR. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1350-4495 1879-0275 |
DOI: | 10.1016/j.infrared.2009.09.005 |