Effects of process parameters on the refractive index of F-doped SiOC:H films grown by PECVD

• Published in: Surface & coatings technology Vol. 201; no. 9; pp. 5363 - 5366
• Main Authors: Yoon, S.G., Kang, S.M., Park, W.J., Kim, H., Yoon, D.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 26.02.2007; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; F-doped SiOC:H; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; PECVD; Physics; Production techniques; Refractive index; Surface treatment; 74.25 Gz; F-doped SiOC:H; PECVD; 78.55.Mb; Refractive index; Thin films; CVD; Plasma; Doping; Surface treatments
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2006.07.111

F-doped SiOC:H films were deposited on P-type (100) Si wafers by plasma enhanced chemical vapor deposition (PECVD) method using an SiH 4, CF 4 and N 2O gas mixture. The refractive index of the F-doped SiOC:H film continuously decreased with increasing deposition temperature and rf power. As the N 2O gas flow rate decreases, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at an rf power of 180 W and 100 °C without flowing N 2O gas. The fluorine content of F-doped SiOC:H film increased from 1.9 at.% to 2.4 at.% as the rf power was increased from 60 W to 180 W, which is consistent with the decreasing trend of refractive index. Also, the maximum fluorine content of the deposited film was 5.5 at.% when it was deposited under the identical process condition exhibiting the lowest refractive index. The surface roughness (root-mean-square) significantly decreased to 0.6 nm with the optimized process condition without flowing N 2O gas.