Effect of oxygen plasma treatment on CdSe/CdZnS quantum-dot light-emitting diodes

Red-light-emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, the oxygen plasma treatment of the indium-tin oxide (ITO) surface was performed to improve the interfacial contact between the ITO anode and the hole injection layer. The devi...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 53; no. 3; pp. 32101 - 1-032101-3
Main Authors Cho, Nam-Kwang, Yu, Jae-woong, Kim, Young Heon, Kang, Seong Jun
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2014
Subjects
Cadmium selenides
Contact
Devices
Intermetallics
Luminance
Oxides
Oxygen plasma
Quantum dots
Voltage
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Summary:Red-light-emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, the oxygen plasma treatment of the indium-tin oxide (ITO) surface was performed to improve the interfacial contact between the ITO anode and the hole injection layer. The device showed red emission at 622 nm, which was consistent with the dimensions of the QDs (band gap: 1.99 eV). The luminance was 108.77 cd/m2 and the current density was 230.2 mA/cm2 at an operating voltage of 7 V, when the oxygen plasma treatment was performed on the ITO surface. The luminance showed 207% improvement compared with that of LEDs fabricated without oxygen plasma treatment. These results suggested that the oxygen plasma treatment of the ITO surface improved the contact between ITO and PEDOT:PSS, and that the light emitting intensity was markedly improved.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.032101