On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds

Kinetic effects limiting the growth rate in MOVPE of III–V compounds are analyzed. A general mechanism—the blocking of group III species adsorption sites by methyl radicals—is suggested and accounted for in an original model of surface chemistry, using experimental data on the decomposition of group...

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Bibliographic Details
Published inJournal of crystal growth Vol. 230; no. 1; pp. 232 - 238
Main Authors Talalaev, R.A., Yakovlev, E.V., Karpov, S.Yu, Makarov, Yu.N.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2001
Subjects
A1. Adsorption
A1. Desorption
A1. Growth models
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III–V materials
A1. Growth models
B1. Nitrides
B2. Semiconducting III–V materials
82.20.Wt
A1. Adsorption
A3. Metalorganic vapor phase epitaxy
81.15.Gh
A1. Desorption
68.45.Da
81.05.Ea
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Summary:Kinetic effects limiting the growth rate in MOVPE of III–V compounds are analyzed. A general mechanism—the blocking of group III species adsorption sites by methyl radicals—is suggested and accounted for in an original model of surface chemistry, using experimental data on the decomposition of group III metal–organic precursors on III–V semiconductor surfaces. The application of the model to GaAs, GaN and InP MOVPE provides a good agreement between the predicted and measured growth rates in a wide range of growth conditions and reactor types.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)01354-9