Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers

• Published in: Journal of crystal growth Vol. 311; no. 14; pp. 3622 - 3625
• Main Authors: Xu, S.R., Hao, Y., Zhang, J.C., Zhou, X.W., Yang, L.A., Zhang, J.F., Duan, H.T., Li, Z.M., Wei, M., Hu, S.G., Cao, Y.R., Zhu, Q.W., Xu, Z.H., Gu, W.P.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2009; Elsevier
• Subjects: A1. Crystal morphology; A3. Metal-organic chemical vapor deposition; B1. Nitrides; B1. Semiconducting III–V materials; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Other materials; Physics; Specific materials; Vapor phase epitaxy; growth from vapor phase; 78.55.Cr; 81.15.Kk; B1. Nitrides; A3. Metal-organic chemical vapor deposition; A1. Crystal morphology; B1. Semiconducting III–V materials; Atomic force microscopy; Organometallic compounds; Roughness; Metal-organic chemical vapor; XRD; Gallium nitride; Crystal perfection; Thin films; A1; Nitrides; Vapor deposition; A3; Sapphire; Crystal morphology; Metal deposition; Aluminium nitride; deposition; Semiconducting III―V materials; III-V compound; B1; Superlattices; Low pressure; Crystal faces; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2009.05.028

Non-polar (1 1 2¯ 0) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1 1¯ 0 2) sapphire substrate. We report on an approach of using AlN/AlGaN superlattices (SLs) for crystal quality improvement of a-plane GaN on r-plane sapphire. Using X-ray diffraction and atomic force microscopy measurements, we show that the insertion of AlN/AlGaN SLs improves crystal quality, reduces surface roughness effectively and eliminates triangular pits on the surface completely.