Endotaxy of MnSb into GaSb

• Published in: Journal of crystal growth Vol. 301; pp. 50 - 53
• Main Authors: Braun, Wolfgang, Trampert, Achim, Kaganer, Vladimir M., Jenichen, Bernd, Satapathy, Dillip K., Ploog, Klaus H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2007; Elsevier
• Subjects: A1. Interfaces; A1. X-ray diffraction; A3. Endotaxy; B2. Magnetic materials; B2. Semiconducting Ga compounds; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Physics; Theory and models of film growth; B2. Semiconducting Ga compounds; A3. Endotaxy; B2. Magnetic materials; 81.15.Hi; 75.50. - y; A1. Interfaces; A1. X-ray diffraction; 81.10. - h; Inorganic compounds; Gallium antimonides; Crystal growth from vapors; XRD; Nanostructures; Al. Interfaces; Al. X-ray diffraction; A3. Endotaxy; B2. Magnetic materials; B2. Semiconducting Ga compounds; III-V compound; Interfaces; Self-assembly; Monocrystals; Manganese antimonides; Growth mechanism; Molecular beam epitaxy; Magnetic materials; 81.10.-h; 81.15.Hi; 75.50.-y; Crystal faces; Diffusion; Nanostructured materials; Nanocrystal; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.09.022

MnSb deposited on GaSb(0 0 1) by molecular beam epitaxy (MBE) is found to separate into disconnected volumes penetrating into the substrate. The MnSb nanocrystals formed in this way are single crystals having a strongly preferred alignment with the substrate matrix and a flat top coplanar with the substrate surface. This endotaxial growth mode opens up new possibilities for self-assembled fabrication of thermodynamically stable micro- and nanostructures. It demonstrates that atoms deep inside the substrate can become mobile during MBE growth, allowing the investigation and design of new approaches to self-assembled growth that utilize bulk migration.