Preparation of polycrystalline and microcrystalline germanium composite films by codeposition of active additives

It is shown experimentally that as-prepared polycrystalline Ge films of various crystallite sizes can be tailored by codepositing SiO x of different concentrations. The formation mechanisms of these structures are discussed by taking into account the theoretical structure zone models of polycrystall...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 227; pp. 1063 - 1068
Main Authors Barna, P.B., Adamik, M., Kaiser, U., Hobert, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1998
Subjects
Microcrystalline Ge
Polycrystalline Ge
SiO x
M215
SiO x
G150
Polycrystalline Ge
Microcrystalline Ge
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Summary:It is shown experimentally that as-prepared polycrystalline Ge films of various crystallite sizes can be tailored by codepositing SiO x of different concentrations. The formation mechanisms of these structures are discussed by taking into account the theoretical structure zone models of polycrystalline films, interpreting the development of the tissue phases covering the grain boundaries. The key phenomenon of these mechanisms is the process-induced segregation of SiO x species on the growing surface of Ge crystals resulting in the formation of an SiO x tissue phase on the crystal surfaces and at the grain boundaries. This kinetic segregation model is proposed for the interpretation of the growth of nanocrystalline Si in case of chemical vapour deposition at high H 2 dilution of SiH 4.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(98)00205-1