Excited States of InAs/GaAs Quantum Dots

• Published in: Physica status solidi. B. Basic research Vol. 224; no. 2; pp. 367 - 371
• Main Authors: Heitz, R., Guffarth, F., Mukhametzhanov, I., Stier, O., Madhukar, A., Bimberg, D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01.03.2001; WILEY‐VCH Verlag Berlin GmbH; Wiley
• Subjects: 71.35.Lc; 73.21.La; 78.55.Cr; 78.67.Hc; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Quantum dots; S7.12; Integrated intensity; Confinement; Gallium arsenides; Inorganic compounds; Semiconductor materials; Quantum dots; Photoluminescence; Binary compounds; Self-assembled layers; Excited states; Experimental study; Indium arsenides; Energy-level transitions; Excitons; Exciton phonon interaction; Excitation spectrum
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/1521-3951(200103)224:2<367::AID-PSSB367>3.0.CO;2-B

Exciton properties of self‐organized InAs/GaAs QDs are investigated. Size‐selective spectroscopy reveals the excited single‐exciton transition spectrum and enhanced polar exciton–LO‐phonon coupling. A good qualitative understanding of the experimental results is achieved by eight‐band k · p calculations. Renormalization of the single‐exciton spectrum in highly populated QDs shows the importance of many‐particle interactions in the strong confinement limit. The ground state transition energy decreases by ∼16 meV for QDs occupied with ∼18 excitons.