Electrochemical Preparation of Porous Organic Polymer Films for High‐Performance Memristors

Porous organic polymer films (PFs) with intrinsical porosity and tuneable pore environment are ideally suited for application in electronic devices. However, the huge challenges still exist for construction of electronic devices based on PFs owing to lack of robustness, processability, and controlla...

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Published inAngewandte Chemie International Edition Vol. 61; no. 38; pp. e202205796 - n/a
Main Authors Tao, You, Liu, Hui, Kong, Hui‐Yuan, Wang, Tian‐Xiong, Sun, Huijuan, Li, Yong Jun, Ding, Xuesong, Sun, Lianfeng, Han, Bao‐Hang
Format Journal Article
LanguageEnglish
Published WEINHEIM Wiley 19.09.2022
Wiley Subscription Services, Inc
EditionInternational ed. in English
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Summary:Porous organic polymer films (PFs) with intrinsical porosity and tuneable pore environment are ideally suited for application in electronic devices. However, the huge challenges still exist for construction of electronic devices based on PFs owing to lack of robustness, processability, and controllable preparation. Herein, we report the electrochemical preparation of carbazole‐based porous organic polymer films (eCPFs) as switchable materials for the memristors. These eCPFs possess the characteristics of controllable thickness/size, high stability, and excellent porosity. Carbazole and cyano groups are introduced into the eCPFs to constructing electron transfer systems. Thus, the memristors constructed based on these eCPFs exhibit excellent switching performance, reliability, and reproducibility. The electrochemically controllable preparation method of porous organic polymer membranes proposed in this paper provides a feasible idea for the developments of electronic devices. The electrochemical preparation of porous organic polymer films for high‐performance memristors is presented. This work will stimulate the development of porous organic polymer films in the field of advanced electron devices.
Bibliography:These authors contributed equally to this work.
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ISSN:1433-7851
1521-3773
DOI:10.1002/anie.202205796