Sequential Molecule‐Doped Hole Conductor to Achieve >23% Perovskite Solar Cells with 3000‐Hour Operational Stability

• Published in: Advanced materials (Weinheim) Vol. 35; no. 35; pp. e2303692 - n/a
• Main Authors: Du, Guozheng, Yang, Li, Dong, Peiyao, Qi, Lianlian, Che, Yuliang, Wang, Xiao, Zhang, Xiaoli, Zhang, Jinbao
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.09.2023
• Subjects: Doping; Energy conversion efficiency; Maximum power; molecular implantation; Optoelectronic devices; perovskite solar cells; Perovskites; Photovoltaic cells; sequential molecular doping; Solar cells; Spiro‐OMeTAD; Stability; thermal evaporation; Spiro-OMeTAD; molecular implantation; sequential molecular doping; thermal evaporation; perovskite solar cells
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.202303692

Although hole transport layers (HTLs) based on solution‐processed doped Spiro‐OMeTAD are extremely popular and effective for their remarkable performance in n‐i‐p perovskite solar cells (PSCs), their scalable application is still being held back by poor chemical stability and unsatisfied scalability. Essentially, the volatile components and hygroscopic nature of ionic salts often cause morphological deformation that deteriorate both device efficiency and stability. Herein, a simple and effective molecular implantation‐assisted sequential doping (MISD) approach is strategically introduced to modulate spatial doping uniformity of organic films and fabricate all evaporated Spiro‐OMeTAD layer in which phase‐segregation free HTL is achieved accompanied with high molecular density, uniform doping composition, and superior optoelectronic characteristics. The resultant MISD‐based devices attain a record power conversion efficiency (PCE) of 23.4%, which represents the highest reported value among all the PSCs with evaporated HTLs. Simultaneously, the unencapsulated devices realize considerably enhanced stability by maintaining over 90% of their initial PCEs in the air for 5200 h and after working at maximum power point under illumination for 3000 h. This method provides a facile way to fabricate robust and reliable HTLs toward developing efficient and stable perovskite solar cells. Application of solution‐processed doped Spiro‐OMeTAD hole transport layers (HTLs) is being held back by poor stability and unsatisfied scalability. Herein, a versatile molecular implantation‐assisted sequential doping approach is developed to improve the spatial doping uniformity and fabricate all‐evaporated HTL. The resultant devices achieve a record efficiency of 23.4%, and exhibit impressive stability both in ambient and working conditions.