Photoluminescence Characteristics of InAs Quantum Dots Grown by STM/MBE Site-Control Technique

• Published in: Physica status solidi. B. Basic research Vol. 224; no. 2; pp. 521 - 526
• Main Authors: Nishikawa, S., Kohmoto, S., Nakamura, H., Ishikawa, T., Asakawa, K., Wada, O.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01.03.2001; WILEY‐VCH Verlag Berlin GmbH; Wiley
• Subjects: 68.37.Ef; 78.55.Cr; 78.67.Hc; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Quantum dots; S7.12; Temperature dependence; Inorganic compounds; Semiconductor materials; Quantum dots; Photoluminescence; Molecular beam epitaxy; Self-assembled layers; Experimental study; Carrier mobility; STM; Indium arsenides; Luminescence decay
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/1521-3951(200103)224:2<521::AID-PSSB521>3.0.CO;2-6

This paper describes micro‐photoluminescence (PL) analysis of site‐controlled QDs (SCQDs) grown using a novel in‐situ MBE growth technique in which sites of self‐assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth.