Structure of ultra-thin silicon film on HOPG studied by polarization-dependence of X-ray absorption fine structure
•Structures of mono-layered silicon on HOPG have been investigated.•XANES spectra show the existence of π∗ and σ∗ orbitals in 0.15 monolayered silicon.•Polarization dependences of XANES show that a part of Si film lies flat on surface.•The results support the existence of graphene-like structure in...
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Published in | Chemical physics letters Vol. 594; pp. 64 - 68 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
20.02.2014
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Online Access | Get full text |
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Summary: | •Structures of mono-layered silicon on HOPG have been investigated.•XANES spectra show the existence of π∗ and σ∗ orbitals in 0.15 monolayered silicon.•Polarization dependences of XANES show that a part of Si film lies flat on surface.•The results support the existence of graphene-like structure in mono-layered silicon.
Structures of mono-layered silicon on a highly oriented pyrolytic graphite (HOPG) have been investigated by X-ray photoelectron spectroscopy and X-ray absorption near edge structure (XANES). For the Si K-edge XANES spectrum of the 0.15 mono-layered film, two distinct peaks were observed, which were assigned to the resonant excitations from the Si 1s into the valence unoccupied orbitals with π∗ and σ∗ characters. On the basis of the polarization dependences of the peak intensities, it was concluded that a part of the Si film lies flat on the HOPG surface, which supports the existence of two-dimensional graphene-like structure in mono-layered silicon. |
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ISSN: | 0009-2614 1873-4448 |
DOI: | 10.1016/j.cplett.2014.01.025 |