The field-dependence of carrier mobility in silicon and germanium
The variation of mobility with electric field has been measured for n- and p-type silicon and germanium with fields up to 10 5 V cm . For p-type silicon the variation is found to depend on hole concentration. For the other materials any variation with concentration must be smaller, and these experim...
Saved in:
| Published in | The Journal of physics and chemistry of solids Vol. 12; no. 2; pp. 175 - 180 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
1960
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | The variation of mobility with electric field has been measured for
n- and
p-type silicon and germanium with fields up to 10
5
V
cm
. For
p-type silicon the variation is found to depend on hole concentration. For the other materials any variation with concentration must be smaller, and these experiments are inconclusive as to its existence. |
|---|---|
| ISSN: | 0022-3697 1879-2553 |
| DOI: | 10.1016/0022-3697(60)90034-2 |