By-Product Formation in a Trichlorosilane-Hydrogen System for Silicon Film Deposition

The process of by-product formation during silicon film deposition using trichlorosilane gas was studied by two types of the in situ measurement techniques, such as the langasite crystal microbalance (LCM) and the quadrupole mass spectra (QMS) analyzer, installed at the exhaust of the chemical vapor...

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Bibliographic Details
Published inECS journal of solid state science and technology Vol. 4; no. 2; pp. P16 - P19
Main Authors Habuka, Hitoshi, Sakurai, Ayumi, Saito, Ayumi
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 01.01.2015
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Summary:The process of by-product formation during silicon film deposition using trichlorosilane gas was studied by two types of the in situ measurement techniques, such as the langasite crystal microbalance (LCM) and the quadrupole mass spectra (QMS) analyzer, installed at the exhaust of the chemical vapor deposition (CVD) reactor. With the increasing hydrogen gas concentration, the QMS showed that the partial pressure related to SiCl2 decreased. Simultaneously, the deposition on the LCM surface decreased. Because SiCl2 gradually produces the burnable by-product of (SiCl2)n, an oily silane, at the exhaust, the CVD parameters effective for suppressing the SiCl2 formation were evaluated.
Bibliography:0031502JSS
ISSN:2162-8769
2162-8777
DOI:10.1149/2.0031502jss