Heteroatom doping of two-dimensional materials: From graphene to chalcogenides

[Display omitted] •Doping modifies physico-chemical properties of graphene and dichalcogenides.•Non-metal elements such as N, B, Si, P, and S are the common dopants to graphene.•Semiconducting dichalcogenide dopants include W, Co, Fe, Mn, Nb, Se and S.•Doped 2D materials exhibit improved performance...

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Published inNano today Vol. 30; p. 100829
Main Authors Zhu, Haoyue, Gan, Xin, McCreary, Amber, Lv, Ruitao, Lin, Zhong, Terrones, Mauricio
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2020
Subjects
Online AccessGet full text
ISSN1748-0132
1878-044X
DOI10.1016/j.nantod.2019.100829

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Abstract [Display omitted] •Doping modifies physico-chemical properties of graphene and dichalcogenides.•Non-metal elements such as N, B, Si, P, and S are the common dopants to graphene.•Semiconducting dichalcogenide dopants include W, Co, Fe, Mn, Nb, Se and S.•Doped 2D materials exhibit improved performance as sensors and optoelectronic devices. In recent years, research on two-dimensional (2D) materials including graphene and transition metal dichalcogenides (TMDCs), especially molybdenum and tungsten disulfides (MoS2 and WS2), has rapidly developed. In order to meet the increasing demands of using these 2D materials in fields as diverse as optoelectronics and sensing, heteroatom doping has become an effective method to tune their electronic and physico-chemical properties. This review discusses versatile doping methods applied to graphene and TMDCs, the corresponding changes to their properties, and their potential applications. Future perspectives and new emerging areas are also presented.
AbstractList [Display omitted] •Doping modifies physico-chemical properties of graphene and dichalcogenides.•Non-metal elements such as N, B, Si, P, and S are the common dopants to graphene.•Semiconducting dichalcogenide dopants include W, Co, Fe, Mn, Nb, Se and S.•Doped 2D materials exhibit improved performance as sensors and optoelectronic devices. In recent years, research on two-dimensional (2D) materials including graphene and transition metal dichalcogenides (TMDCs), especially molybdenum and tungsten disulfides (MoS2 and WS2), has rapidly developed. In order to meet the increasing demands of using these 2D materials in fields as diverse as optoelectronics and sensing, heteroatom doping has become an effective method to tune their electronic and physico-chemical properties. This review discusses versatile doping methods applied to graphene and TMDCs, the corresponding changes to their properties, and their potential applications. Future perspectives and new emerging areas are also presented.
ArticleNumber 100829
Author Zhu, Haoyue
Lv, Ruitao
Terrones, Mauricio
McCreary, Amber
Gan, Xin
Lin, Zhong
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  givenname: Xin
  surname: Gan
  fullname: Gan, Xin
  organization: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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  givenname: Amber
  surname: McCreary
  fullname: McCreary, Amber
  organization: Department of Physics, Pennsylvania State University, University Park, PA 16802, USA
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  givenname: Ruitao
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  fullname: Lv, Ruitao
  organization: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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  givenname: Zhong
  surname: Lin
  fullname: Lin, Zhong
  organization: Department of Physics, Pennsylvania State University, University Park, PA 16802, USA
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  givenname: Mauricio
  surname: Terrones
  fullname: Terrones, Mauricio
  email: mut11@psu.edu
  organization: Department of Chemistry, Pennsylvania State University, University Park, PA 16802, USA
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Keywords Molybdenum disulfide
MoS2
Graphene
Tungsten disulfide
2D materials
WS2
Doping
Electronics
Sensing
TMD
Transition metal dichalcogenides
Sensor
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Snippet [Display omitted] •Doping modifies physico-chemical properties of graphene and dichalcogenides.•Non-metal elements such as N, B, Si, P, and S are the common...
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StartPage 100829
SubjectTerms 2D materials
Doping
Electronics
Graphene
Molybdenum disulfide
MoS2
Sensing
Sensor
TMD
Transition metal dichalcogenides
Tungsten disulfide
WS2
Title Heteroatom doping of two-dimensional materials: From graphene to chalcogenides
URI https://dx.doi.org/10.1016/j.nantod.2019.100829
Volume 30
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