Heteroatom doping of two-dimensional materials: From graphene to chalcogenides

• Published in: Nano today Vol. 30; p. 100829
• Main Authors: Zhu, Haoyue, Gan, Xin, McCreary, Amber, Lv, Ruitao, Lin, Zhong, Terrones, Mauricio
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.2020
• Subjects: 2D materials; Doping; Electronics; Graphene; Molybdenum disulfide; MoS2; Sensing; Sensor; TMD; Transition metal dichalcogenides; Tungsten disulfide; WS2; Molybdenum disulfide; MoS2; Graphene; Tungsten disulfide; 2D materials; WS2; Doping; Electronics; Sensing; TMD; Transition metal dichalcogenides; Sensor
• ISSN: 1748-0132; 1878-044X
• DOI: 10.1016/j.nantod.2019.100829

[Display omitted] •Doping modifies physico-chemical properties of graphene and dichalcogenides.•Non-metal elements such as N, B, Si, P, and S are the common dopants to graphene.•Semiconducting dichalcogenide dopants include W, Co, Fe, Mn, Nb, Se and S.•Doped 2D materials exhibit improved performance as sensors and optoelectronic devices. In recent years, research on two-dimensional (2D) materials including graphene and transition metal dichalcogenides (TMDCs), especially molybdenum and tungsten disulfides (MoS2 and WS2), has rapidly developed. In order to meet the increasing demands of using these 2D materials in fields as diverse as optoelectronics and sensing, heteroatom doping has become an effective method to tune their electronic and physico-chemical properties. This review discusses versatile doping methods applied to graphene and TMDCs, the corresponding changes to their properties, and their potential applications. Future perspectives and new emerging areas are also presented.