Studies of hydrogen sulfide and ammonia adsorption on P- and Si-doped graphene: density functional theory calculations
Studies of hydrogen sulfide (H 2 S) and ammonia (NH 3 ) adsorption on phosphorus (P) and silicon (Si) doped graphene are performed by ab initio calculations using the periodic density functional theory (DFT). The P and Si incorporation in graphene distorts the unit cell altering the bond lengths and...
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Published in | Journal of molecular modeling Vol. 25; no. 4; pp. 94 - 12 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin/Heidelberg
Springer Berlin Heidelberg
01.04.2019
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Studies of hydrogen sulfide (H
2
S) and ammonia (NH
3
) adsorption on phosphorus (P) and silicon (Si) doped graphene are performed by ab initio calculations using the periodic density functional theory (DFT). The P and Si incorporation in graphene distorts the unit cell altering the bond lengths and angles. Unlike the pristine, the phosphorus-doped graphene shows a metallic behavior, and the silicon-doped graphene is a semiconductor with an energy gap of 0.25 eV. Moreover, the electronic properties of phosphorus-doped graphene may change with the adsorption of hydrogen sulfide and ammonia. However, the silicon-doped graphene only shows changes with the adsorption of hydrogen sulfide. In addition, the silicon-doped graphene exhibits chemisorption when interacting with ammonia. According to the obtained results, phosphorus-doped graphene is suitable as a gas sensor of hydrogen sulfide and ammonia, in contrast with the silicon-doped structure, which may be used as a sensor of hydrogen sulfide.
Graphical Abstract
Ammonia adsorption on Si-doped graphene |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1610-2940 0948-5023 |
DOI: | 10.1007/s00894-019-3974-y |