Photoresist ashing in nitrogen gas using ferrite core inductively coupled plasmas

The characteristics of photoresist (PR) ashing using N 2 plasmas in a ferrite core inductively coupled plasma etcher have been studied and the effect of bias power and gas flow rate on PR ash rate and low- k material etch rate has been investigated. Fourier transform infrared spectroscopy revealed t...

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Bibliographic Details
Published inVacuum Vol. 80; no. 1; pp. 193 - 197
Main Authors Kim, Hyoun Woo, Myung, Ju Hyun, Kim, Nam Ho, Chung, Chin Wook, Park, Wan Jae, Kang, Chang-Jin, Yoo, Chung-Gon, Choi, Dae-Kyu
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 14.10.2005
Subjects
Ferrite core HF plasmas
Low- k material
Plasma ashing
Ferrite core HF plasmas
Low- k material
Plasma ashing
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Summary:The characteristics of photoresist (PR) ashing using N 2 plasmas in a ferrite core inductively coupled plasma etcher have been studied and the effect of bias power and gas flow rate on PR ash rate and low- k material etch rate has been investigated. Fourier transform infrared spectroscopy revealed that the ashing process with N 2 gas produced less damage to the low- k material compared to the process with O 2 gas. The HF etch test was used to evaluate the ash damage to the low- k material.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2005.08.009