Growth of Mg2Si1-xGex layers on silicon-germanium substrates

Mg2Si1-xGex layers were grown on silicon-germanium substrates by heat treatment of the substrates in Mg vapor. The layers were grown by an interdiffusion process between the deposited Mg atoms and the substrates. It has been demonstrated that smooth and continuous layers can be grown with an abrupt...

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 508; no. 1-2; pp. 70 - 73
Main Authors MIZUYOSHI, Yusuke, YAMADA, Ryuji, OHISHI, Takuya, SAITO, Yoshiro, KOYAMA, Tadanobu, HAYAKAWA, Yasuhiro, MATSUYAMA, Takashi, TATSUOKA, Hirokazu
Format Conference Proceeding Journal Article
LanguageEnglish
Published Lausanne Elsevier Science 05.06.2006
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Vapor phase epitaxy; growth from vapor phase
Inorganic compounds
Semiconductor materials
Semiconductors
Silicides
Magnesium alloys
Thick films
Crystallization
Kirkendall effect
Interdiffusion
Experimental study
Heat treatments
Interfaces
Germanium alloys
Silicon alloys
Phase separation
Growth mechanism
Magnesium
Diffusion
Online AccessGet full text

Cover

More Information
Summary:Mg2Si1-xGex layers were grown on silicon-germanium substrates by heat treatment of the substrates in Mg vapor. The layers were grown by an interdiffusion process between the deposited Mg atoms and the substrates. It has been demonstrated that smooth and continuous layers can be grown with an abrupt layer/substrate interface, and no Kirkendall void is formed. It was found that the Ge contents of the grown layers almost agree with those of the substrates used without any phase separation and/or additional compositional deviation caused by the thermal treatment.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.07.331