Growth and scintillation properties of Eu doped LiSrI3/LiI eutectics
Eu doped LiSrI3/LiI eutectics were grown by the Bridgman method in a quartz ample with 4 mm inner diameter. and their directionally solidified eutectic system has been investigated. Growth rate was 0.3 mm/min. The eutectic showed well aligned eutectic structure and optically transparent. Grown Eu do...
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Published in | Optical materials Vol. 68; pp. 70 - 74 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.06.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Eu doped LiSrI3/LiI eutectics were grown by the Bridgman method in a quartz ample with 4 mm inner diameter. and their directionally solidified eutectic system has been investigated. Growth rate was 0.3 mm/min. The eutectic showed well aligned eutectic structure and optically transparent. Grown Eu doped LiSrI3/LiI eutectic shows 400 nm emission ascribed to Eu2+ 4f-5d transition under X-ray excitation. The light yield was around 26,000 photon/MeV for 662 keV gamma-ray and 35,000 photons for 5.5 MeV alpha-ray.
•Eu doped LiSrI3/LiI eutectics were grown and their DSE system has been investigated.•Grown eutectic shows 400 nm emission ascribed to Eu2+ 4f-5d transition.•The light yield was around 80% of Ce:Lu2SiO4 (LYSO) standard and 26,000 photon/MeV.•Scintillation decay time under 662 keV ramma-ray was 510 ns. |
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ISSN: | 0925-3467 1873-1252 |
DOI: | 10.1016/j.optmat.2017.05.010 |